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| AF70N02 N-Channel Enhancement Mode Power MOSFET Features -Low Gate Charge -Simple Drive Requirement -Fast Switching -Pb Free Plating Product General Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Product Summary BVDSS (V) 25 RDS(ON) (m) 9 ID (A) 66 Pin Assignments (Front View) Pin Descriptions Pin Name 3 2 1 D G S Description Source Gate Drain S G D Ordering information AX Feature F :MOSFET PN 70N02 X X Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 10, 2005 1/6 AF70N02 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25C TC=100C TC=25C Rating 25 20 66 42 210 66 0.53 -55 to 150 -55 to 150 Units V V A A W W/C C C Thermal Data Symbol RJC RJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max. Max. Maximum 1.9 110 Units C/W C/W Electrical Characteristics (TJ=25C unless otherwise noted) Symbol BVDSS BVDSS/TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current(TJ=25C) Drain-Source Leakage Current(TJ=150C) Gate Source Leakage Total Gate Charge (Note 2) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 2) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25C, ID=1mA VGS=10V, ID=33A VGS=4.5V, ID=20A VDS= VGS, ID=250uA VDS=10V, ID=33A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS=20V ID=33A VDS=20V VGS=5V VDS=15V ID=33A RG=3.3, VGS=10V RD=0.45 VGS=0V VDS=25V, f=1.0MHz Min. 25 1 Limits Typ. 0.037 28 23 3 17 8.8 95 24 14 790 475 195 Max. 9 18 3 1 uA 25 100 nA nC Unit V V/C m V S nS pF Source-Drain Diode Sym. IS ISM VSD Parameter Test Conditions Continuous Source Current (Body Diode) VD=VG=0V, VS=1.26V Pulsed Source Current (Body Diode) (Note 1) Min. - Typ. - Max. 66 210 1.26 Unit A A V Forward On Voltage (Note 2) TJ=25C, IS=66A, VGS=0V Anachip Corp. www.anachip.com.tw 2/6 Rev. 1.0 Aug 10, 2005 AF70N02 N-Channel Enhancement Mode Power MOSFET Drain-Source Avalanche Ratings Sym. EAS IAR Parameter Single Pulse Avalanche Energy (Note 2) Avalanche Current Test Conditions VDD=25V, ID=35A, L=100uH, VGS=10V Min. Typ. Max. 61 35 Unit mJ A Note 1: Pulse width limited by safe operating area. Note 2: Pulse width < 300us, duty cycle < 2%. Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 3/6 Rev. 1.0 Aug 10, 2005 AF70N02 N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Anachip Corp. www.anachip.com.tw Fig 10. Typical Capacitance Characteristics Rev. 1.0 4/6 Aug 10, 2005 AF70N02 N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 5/6 Rev. 1.0 Aug 10, 2005 AF70N02 N-Channel Enhancement Mode Power MOSFET Marking Information TO-252 ( Top View) Logo Part Number 70N02 YYWWX YY : Year WW: Nth week X : Internal code ( Optional) Package Information Package Type: TO-252 D D1 E2 E3 B1 e A2 e R: 0.127~0.381 F1 A3 (0.1mm) 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A2 A3 B1 D D1 F F1 E1 E2 E3 e C Dimensions In Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65 Anachip Corp. www.anachip.com.tw 6/6 C F E1 Rev. 1.0 Aug 10, 2005 |
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